• DocumentCode
    3619463
  • Title

    High Frequency Analysis of InP Transistors versus Temperature

  • Author

    F. Aniel;N. Zerounian;A. Almeyda;V. Danelon;G. Vernet;P. Crozat;R. Adde;J.-C. Harmand;C. Ladner

  • Author_Institution
    University Paris-South, France
  • fYear
    1997
  • fDate
    6/19/1905 12:00:00 AM
  • Firstpage
    708
  • Lastpage
    711
  • Keywords
    "Frequency","Indium phosphide","Hafnium","HEMTs","Temperature dependence","Equivalent circuits","Roentgenium","Microwave devices","Cryogenics","Performance evaluation"
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1997. Proceeding of the 27th European
  • Print_ISBN
    2-86332-221-4
  • Type

    conf

  • DOI
    10.1109/ESSDERC.1997.194527
  • Filename
    1503457
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3619463