مرکز منطقه ای اطلاع رساني علوم و فناوري

DocumentCode :

3619464

Title :

Analytical modeling of InP/InGaAs HBTs

Author :

H. Sheng;A. Rezazadeh;D. Wake

Author_Institution :

King´s College London, UK

fYear :

1997

fDate :

6/19/1905 12:00:00 AM

Firstpage :

712

Lastpage :

715

Keywords :

"Analytical models","Indium phosphide","Indium gallium arsenide","Heterojunction bipolar transistors","Boundary conditions","Spontaneous emission","Radio frequency","Semiconductor process modeling","Doping","Dielectrics"

Publisher :

ieee

Conference_Titel :

Solid-State Device Research Conference, 1997. Proceeding of the 27th European

Print_ISBN :

2-86332-221-4

Type :

conf

DOI :

10.1109/ESSDERC.1997.194528

Filename :

1503458

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3619464