• DocumentCode
    3619464
  • Title

    Analytical modeling of InP/InGaAs HBTs

  • Author

    H. Sheng;A. Rezazadeh;D. Wake

  • Author_Institution
    King´s College London, UK
  • fYear
    1997
  • fDate
    6/19/1905 12:00:00 AM
  • Firstpage
    712
  • Lastpage
    715
  • Keywords
    "Analytical models","Indium phosphide","Indium gallium arsenide","Heterojunction bipolar transistors","Boundary conditions","Spontaneous emission","Radio frequency","Semiconductor process modeling","Doping","Dielectrics"
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1997. Proceeding of the 27th European
  • Print_ISBN
    2-86332-221-4
  • Type

    conf

  • DOI
    10.1109/ESSDERC.1997.194528
  • Filename
    1503458
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3619464