• DocumentCode
    3619465
  • Title

    A Novel Functional Heterostructure-Emitter and Hereostructure-Base Transistor (HEHBT)

  • Author

    W.-C. Liu;J.-H. Tsai;S.-Y. Cheng;P.-H. Lin;W.-C. Wang;J.-Y. Chen

  • Author_Institution
    National Cheng-Kung University, Taiwan
  • fYear
    1997
  • fDate
    6/19/1905 12:00:00 AM
  • Firstpage
    716
  • Lastpage
    719
  • Keywords
    "Gallium arsenide","Indium gallium arsenide","Logic circuits","Voltage","Molecular beam epitaxial growth","Bipolar transistors","Quantum well devices","Electrons","P-n junctions","Charge carrier processes"
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1997. Proceeding of the 27th European
  • Print_ISBN
    2-86332-221-4
  • Type

    conf

  • DOI
    10.1109/ESSDERC.1997.194529
  • Filename
    1503459
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3619465