Title :
As and B Diffusion in TiSi2/Polysilicon Gates with Dual Workfunction Gate Technology
Author :
A. Berthold;E. Hammerl;H. von Philipsborn
Author_Institution :
Siemens Corporate Technology, Germany and University of Regensburg, Germany
fDate :
6/19/1905 12:00:00 AM
Keywords :
"Annealing","Testing","Furnaces","MOSFETs","Atomic layer deposition","CMOS technology","Hardware","CMOS process","Threshold voltage","MOS devices"
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
DOI :
10.1109/ESSDERC.1997.194536
