3619474

C-V characteristics of Pt/SrBi2Ta2O9/CeO2/Si structure for non-volatile memory devices

H.N. Lee;D.S. Shin;Y.T. Kim;S.H. Choh

Korea Institute of Science and Technology, Korea and Department of Physics, Korea University, Korea

1997

6/19/1905 12:00:00 AM

756

759

"Capacitance-voltage characteristics","Nonvolatile memory","Ferroelectric materials","Annealing","Bismuth","Random access memory","Capacitors","Strontium","Atmosphere","Magnetic force microscopy"

ieee

Solid-State Device Research Conference, 1997. Proceeding of the 27th European

2-86332-221-4

conf

10.1109/ESSDERC.1997.194539

1503469