• DocumentCode
    3619474
  • Title

    C-V characteristics of Pt/SrBi2Ta2O9/CeO2/Si structure for non-volatile memory devices

  • Author

    H.N. Lee;D.S. Shin;Y.T. Kim;S.H. Choh

  • Author_Institution
    Korea Institute of Science and Technology, Korea and Department of Physics, Korea University, Korea
  • fYear
    1997
  • fDate
    6/19/1905 12:00:00 AM
  • Firstpage
    756
  • Lastpage
    759
  • Keywords
    "Capacitance-voltage characteristics","Nonvolatile memory","Ferroelectric materials","Annealing","Bismuth","Random access memory","Capacitors","Strontium","Atmosphere","Magnetic force microscopy"
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1997. Proceeding of the 27th European
  • Print_ISBN
    2-86332-221-4
  • Type

    conf

  • DOI
    10.1109/ESSDERC.1997.194539
  • Filename
    1503469
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3619474