DocumentCode :
3619476
Title :
Three-Dimensional Simulation of SiO2 Profiles from TEOS-Sourced Remote Microwave Plasma-Enhanced Chemical Vapor Deposition
Author :
E. Bear;J. Lorenz;H. Ryssel
Author_Institution :
Fraunhofer Institut fü
fYear :
1998
fDate :
6/20/1905 12:00:00 AM
Firstpage :
340
Lastpage :
343
Keywords :
"Plasma simulation","Plasma chemistry","Chemical vapor deposition","Surface topography","Plasma materials processing","Computational modeling","Iterative algorithms","Semiconductor device manufacture","Calibration","Software algorithms"
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1998. Proceeding of the 28th European
Print_ISBN :
2-86332-234-6
Type :
conf
Filename :
1503558
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3619476
