• DocumentCode
    3619478
  • Title

    Ledge-Thickness of InGaP Passivation-Layer on InGaP/GaAs Delta-Doped Single HBT´s

  • Author

    W.-S. Lour;J.L. Hsieh;C.Y. Lia

  • Author_Institution
    National Taiwan-Ocean University, Keelung, Taiwan
  • fYear
    1998
  • fDate
    6/20/1905 12:00:00 AM
  • Firstpage
    528
  • Lastpage
    531
  • Keywords
    "Gallium arsenide","Heterojunction bipolar transistors","Passivation","Etching","Fabrication","Substrates","Current measurement","Voltage","RNA","Degradation"
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1998. Proceeding of the 28th European
  • Print_ISBN
    2-86332-234-6
  • Type

    conf

  • Filename
    1503605
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3619478