• DocumentCode
    3619483
  • Title

    The impact of the Ge content on the characteristics of strained Si(1-x)Ge(x) epitaxial diodes before and after degradation by high energy particles

  • Author

    H. Ohyama;E. Simoen;C. Claeys;Y. Takami;K. Hayama;T. Hakata;K. Kobayashi;H. Sunaga;J. Poortmans;M. Caymax

  • Author_Institution
    Kumamoto National College of Technology, Japan
  • fYear
    1998
  • fDate
    6/20/1905 12:00:00 AM
  • Firstpage
    548
  • Lastpage
    551
  • Keywords
    "Diodes","Degradation","Epitaxial layers","Boron","Silicon","Substrates","Voltage","Capacitance-voltage characteristics","Capacitance measurement","Current measurement"
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1998. Proceeding of the 28th European
  • Print_ISBN
    2-86332-234-6
  • Type

    conf

  • Filename
    1503610
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3619483