DocumentCode :
3619493
Title :
Control of Leakage Current in Polysilicon TFT´s by the Implantation of Boron
Author :
L.J. Quinn;P.T. Baine;B. Lee;S.J.N. Mitchell;B.M. Armstrong;H.S. Gamble
Author_Institution :
The Queen´s University of Belfast, UK
fYear :
1998
fDate :
6/20/1905 12:00:00 AM
Firstpage :
588
Lastpage :
591
Keywords :
"Leakage current","Boron","Thin film transistors","Glass","Dielectric substrates","Implants","Silicon compounds","Annealing","Fabrication","Amorphous silicon"
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1998. Proceeding of the 28th European
Print_ISBN :
2-86332-234-6
Type :
conf
Filename :
1503620
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3619493
