• DocumentCode
    3619493
  • Title

    Control of Leakage Current in Polysilicon TFT´s by the Implantation of Boron

  • Author

    L.J. Quinn;P.T. Baine;B. Lee;S.J.N. Mitchell;B.M. Armstrong;H.S. Gamble

  • Author_Institution
    The Queen´s University of Belfast, UK
  • fYear
    1998
  • fDate
    6/20/1905 12:00:00 AM
  • Firstpage
    588
  • Lastpage
    591
  • Keywords
    "Leakage current","Boron","Thin film transistors","Glass","Dielectric substrates","Implants","Silicon compounds","Annealing","Fabrication","Amorphous silicon"
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1998. Proceeding of the 28th European
  • Print_ISBN
    2-86332-234-6
  • Type

    conf

  • Filename
    1503620
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3619493