DocumentCode :
3619496
Title :
Impact of Premetal process on the 0.25 um device performances
Author :
N.H. Loof;K. Barla;B. Descouts;J. Geulen;C. Verove;M. Ada-Hanifi
Author_Institution :
Philips Semiconductors, Netherlands
fYear :
1998
fDate :
6/20/1905 12:00:00 AM
Firstpage :
600
Lastpage :
603
Keywords :
"Etching","Silicon","Boron","Integrated circuit interconnections","Chemistry","MOSFET circuits","Degradation","Telecommunications","Logic circuits","Chemical technology"
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1998. Proceeding of the 28th European
Print_ISBN :
2-86332-234-6
Type :
conf
Filename :
1503623
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3619496