DocumentCode :
3619498
Title :
Ultra thin gate oxides for 0.1um heterojunction CMOS applications by the use of a sacrifical Si layer
Author :
R. Loo;M. Caymax;P. Verheyen;T. Conard;H. Bender;W. Vandervorst;N. Collaert;K.D. Meyer
Author_Institution :
IMEC, Leuven, Belgium
fYear :
1998
fDate :
6/20/1905 12:00:00 AM
Firstpage :
608
Lastpage :
611
Keywords :
"Heterojunctions","Oxidation","Semiconductor films","Epitaxial layers","Epitaxial growth","Chemical vapor deposition","Mass spectroscopy","Thickness control","Furnaces","Physics"
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1998. Proceeding of the 28th European
Print_ISBN :
2-86332-234-6
Type :
conf
Filename :
1503625
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3619498
