• DocumentCode
    3619498
  • Title

    Ultra thin gate oxides for 0.1um heterojunction CMOS applications by the use of a sacrifical Si layer

  • Author

    R. Loo;M. Caymax;P. Verheyen;T. Conard;H. Bender;W. Vandervorst;N. Collaert;K.D. Meyer

  • Author_Institution
    IMEC, Leuven, Belgium
  • fYear
    1998
  • fDate
    6/20/1905 12:00:00 AM
  • Firstpage
    608
  • Lastpage
    611
  • Keywords
    "Heterojunctions","Oxidation","Semiconductor films","Epitaxial layers","Epitaxial growth","Chemical vapor deposition","Mass spectroscopy","Thickness control","Furnaces","Physics"
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1998. Proceeding of the 28th European
  • Print_ISBN
    2-86332-234-6
  • Type

    conf

  • Filename
    1503625
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3619498