DocumentCode
3619500
Title
Channel Coupling and Edge Effect Imposed Trade-offs on Fully-Depleted (FD) SOI MOSFET´s
Author
D.E. Ioannou;F.L. Duan;W.C. Jenkins;H.L. Hughes
Author_Institution
George Mason University, Fairfax, VA, United States
fYear
1998
fDate
6/20/1905 12:00:00 AM
Firstpage
616
Lastpage
619
Keywords
"MOSFET circuits","Voltage","Hot carriers","Degradation","Doping profiles","Impact ionization","Substrates","Numerical simulation","Silicon","Semiconductor films"
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 1998. Proceeding of the 28th European
Print_ISBN
2-86332-234-6
Type
conf
Filename
1503627
Link To Document