DocumentCode :
3619501
Title :
Plasma-Induced Nitridation of the Gate Oxide Dielectrics: Linked Equipment-Feature-Atomic Scale Simulations
Author :
V. Sukharev;S. Aronowitz;V. Zubkov;H. Puchner;J. Haywood;J. Kimball
Author_Institution :
LSI Logic Corporation, Santa Clara, CA, United States
fYear :
1998
fDate :
6/20/1905 12:00:00 AM
Firstpage :
620
Lastpage :
623
Keywords :
"Plasma simulation","Nitrogen","Plasma sources","Inductors","Atomic layer deposition","CMOS technology","Boron","Employment","Dielectric films","Plasma temperature"
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1998. Proceeding of the 28th European
Print_ISBN :
2-86332-234-6
Type :
conf
Filename :
1503628
Link To Document :
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