3619501

Plasma-Induced Nitridation of the Gate Oxide Dielectrics: Linked Equipment-Feature-Atomic Scale Simulations

V. Sukharev;S. Aronowitz;V. Zubkov;H. Puchner;J. Haywood;J. Kimball

LSI Logic Corporation, Santa Clara, CA, United States

1998

6/20/1905 12:00:00 AM

620

623

"Plasma simulation","Nitrogen","Plasma sources","Inductors","Atomic layer deposition","CMOS technology","Boron","Employment","Dielectric films","Plasma temperature"

ieee

Solid-State Device Research Conference, 1998. Proceeding of the 28th European

2-86332-234-6

conf

1503628