مرکز منطقه ای اطلاع رساني علوم و فناوري - Full description of the precipitation of interstitials into dislocation loops

DocumentCode :

3619505

Title :

Full description of the precipitation of interstitials into dislocation loops

Author :

E. Lampin;V. Senez

Author_Institution :

I.E.M.N., Villeneuve d´Ascq, France

fYear :

1998

fDate :

6/20/1905 12:00:00 AM

Firstpage :

636

Lastpage :

639

Keywords :

"Costs","Annealing","Kinetic theory","Amorphous materials","Lattices","Equations","Boron","Germanium","Silicon","MOSFETs"

Publisher :

ieee

Conference_Titel :

Solid-State Device Research Conference, 1998. Proceeding of the 28th European

Print_ISBN :

2-86332-234-6

Type :

conf

Filename :

1503632

Link To Document :