High Voltage MOS Transistor with a Folded n- Region for Flash Technology

Author

F. Hofmann;W. Rosner;E. Landgraf

Author_Institution

Infineon Technologies AG, Munich, Germany

fYear

2000

fDate

6/22/1905 12:00:00 AM

Firstpage

232

Lastpage

235

Keywords

"Voltage","MOSFETs","Flash memory","Etching","Nonvolatile memory","Logic devices","Resists","MOS devices","EPROM","Charge pumps"

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2000. Proceeding of the 30th European

Print_ISBN

2-86332-248-6

Type

DOI

10.1109/ESSDERC.2000.194757

Filename

1503687

Link To Document