DocumentCode :
3619513
Title :
Temperature-Dependent Character istics of a Novel InP/InGaAlAs Heterojunction Bipolar Transistor
Author :
W.C. Liu;H.J. Pan;W.C. Wang;C.C. Cheng;S.C. Feng;C.H. Yen;K.W. Lin
Author_Institution :
National Cheng-Kung University, Tainan, Taiwan
fYear :
2000
fDate :
6/22/1905 12:00:00 AM
Firstpage :
240
Lastpage :
243
Keywords :
"Indium phosphide","Heterojunction bipolar transistors","Temperature dependence","Indium gallium arsenide","Photonic band gap","Electrons","Atomic layer deposition","Conducting materials","Low voltage","Power dissipation"
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
Type :
conf
DOI :
10.1109/ESSDERC.2000.194759
Filename :
1503689
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3619513
