Title :
NO post annealed oxide versus re-oxidised NO oxide
Author :
S. Kubicek;M. Schaekers;A. De Keersgieter;E. Augendre;G. Badenes;K. De Meyer
Author_Institution :
IMEC, Leuven, Belgium and KU Leuven, Belgium
fDate :
6/22/1905 12:00:00 AM
Keywords :
"Annealing","Nitrogen","MOS devices","MOSFETs","Dielectrics","Degradation","Boron","CMOS technology","Electron mobility","Hot carriers"
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
DOI :
10.1109/ESSDERC.2000.194765
