Title :
MOS Memory Using Silicon Nanocrystals Formed by Very-Low Energy Ion Implantation
Author :
E. Kapetanakis;P. Normand;D. Tsoukalas;G. Kamoulakos;D. Kouvatsos;J. Stoemenos;S. Zhang;J. van den Berg;D.G. Armour
Author_Institution :
NCSR Demokritos, Aghia Paraskevi, Greece
fDate :
6/22/1905 12:00:00 AM
Keywords :
"Silicon","Nanocrystals","Ion implantation","Annealing","Fabrication","Nonvolatile memory","Nitrogen","Physics","MOSFET circuits","Tunneling"
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
DOI :
10.1109/ESSDERC.2000.194818
