• DocumentCode
    3619533
  • Title

    On the Characterisation of ALCVD ZrO2; Electrical and Structural Properties

  • Author

    E.W.A. Young;W.F.A. Besling

  • Author_Institution
    Philips Research Laboratories, Eindhoven, The Netherlands
  • fYear
    2000
  • fDate
    6/22/1905 12:00:00 AM
  • Firstpage
    488
  • Lastpage
    491
  • Keywords
    "High K dielectric materials","Silicon","Hafnium","High-K gate dielectrics","Dielectric substrates","Annealing","Leakage current","Zirconium","Performance analysis","Laboratories"
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2000. Proceeding of the 30th European
  • Print_ISBN
    2-86332-248-6
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2000.194821
  • Filename
    1503751
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3619533