Simulation of Polysilicon Emitter Bipolar Transistors
Author :
V. Palankovski;T. Grasser;M. Knaipp;S. Selberherr
Author_Institution :
Vienna University of Technology, Austria
fYear :
2000
fDate :
6/22/1905 12:00:00 AM
Firstpage :
608
Lastpage :
611
Keywords :
"Bipolar transistors","Microelectronics","CMOS technology","Silicon","Chemical technology","Boron","Diffusion processes","Doping profiles","Semiconductor process modeling","Power system modeling"
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
