DocumentCode :
3619540
Title :
Numerical Simulation and Comparison of Vertical and Lateral SiGe HBT´s for RF/Microwave Applications
Author :
J.S. Hamel;Y.T. Tang
Author_Institution :
University of Southampton, UK
fYear :
2000
fDate :
6/22/1905 12:00:00 AM
Firstpage :
620
Lastpage :
623
Keywords :
"Numerical simulation","Silicon germanium","Germanium silicon alloys","Heterojunction bipolar transistors","Radio frequency","Microwave technology","Application software","Lithography","Integrated circuit technology","Silicon on insulator technology"
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
Type :
conf
DOI :
10.1109/ESSDERC.2000.194854
Filename :
1503784
Link To Document :
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