DocumentCode :
3619546
Title :
High Reproducible Ideal SiC Schottky Rectifiers by Controlling Surface Preparation and Thermal Treatments
Author :
F. Roccaforte;F. La Via;V. Raineri
Author_Institution :
CNR-IMM, Catania, Italy
fYear :
2002
fDate :
6/24/1905 12:00:00 AM
Firstpage :
543
Lastpage :
546
Keywords :
"Silicon carbide","Rectifiers","Surface treatment","Schottky diodes","Dry etching","Wet etching","Annealing","Thermal conductivity","Fabrication","Schottky barriers"
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
Type :
conf
DOI :
10.1109/ESSDERC.2002.194988
Filename :
1503918
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3619546
