• DocumentCode
    3619551
  • Title

    Investigation of Performance Improvement and Gate-to-junction Leakage Reduction for the 90nm CMOS Gate Stack Architecture

  • Author

    K. Henson;S. Kubicek;A. Redolfi;K. De Meyer;M. Jurczak;E. Augendre

  • Author_Institution
    IMEC, Leuven, Belgium
  • fYear
    2002
  • fDate
    6/24/1905 12:00:00 AM
  • Firstpage
    563
  • Lastpage
    566
  • Keywords
    "MOS devices","Oxidation","Electrodes","Amorphous materials","Implants","MOSFETs","Inverters","High K dielectric materials","Gate leakage","Furnaces"
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
  • Print_ISBN
    88-900847-8-2
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2002.194993
  • Filename
    1503923
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3619551