Title :
Effect of Pulsed Stress on Leakage Current In MOS Capacitors For Non-Volatile Memory Applications
Author :
D. Caputo;R. Feruglio;F. Irrera;B. Ricco
Author_Institution :
University of Rome "La Sapienza", Italy
fDate :
6/24/1905 12:00:00 AM
Keywords :
"Stress","Leakage current","MOS capacitors","Nonvolatile memory"
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
DOI :
10.1109/ESSDERC.2002.194994
