• DocumentCode
    3619553
  • Title

    Highly Extendible Memory Cell Architecture for Reliable Data Retention Time for 0.10mm Technology Node and beyond

  • Author

    J. Lee;C. Cho;J. Lee;S. Shin;J.-W. Lee;K. Kwak;K. Lee;B. Roh;T. Chung;K. Kim

  • Author_Institution
    Samsung Electronics Co., Yongin-City, Kyungki-Do, Korea (South)
  • fYear
    2002
  • fDate
    6/24/1905 12:00:00 AM
  • Firstpage
    571
  • Lastpage
    574
  • Keywords
    "Memory architecture","Random access memory","Leakage current","Surface cleaning","Capacitors","Space technology","Etching","Dielectrics","Doping","Capacitance"
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
  • Print_ISBN
    88-900847-8-2
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2002.194995
  • Filename
    1503925
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3619553