DocumentCode :
3619555
Title :
Influence of Doping Profile and Halo Implantation on the Threshold Voltage Mismatch of a 0.13um CMOS Technology
Author :
J.A. Croon;E. Augendre;S. Decoutere;W. Sansen;H.E. Maes
Author_Institution :
IMEC, Belgium and KU Leuven, Belgium
fYear :
2002
fDate :
6/24/1905 12:00:00 AM
Firstpage :
579
Lastpage :
582
Keywords :
"CMOS technology","Doping profiles","Threshold voltage","Fluctuations","Implants","Permittivity","Poisson equations","Statistics","Capacitance","Degradation"
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
Type :
conf
DOI :
10.1109/ESSDERC.2002.194997
Filename :
1503927
Link To Document :
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