Title :
Influence of Doping Profile and Halo Implantation on the Threshold Voltage Mismatch of a 0.13um CMOS Technology
Author :
J.A. Croon;E. Augendre;S. Decoutere;W. Sansen;H.E. Maes
Author_Institution :
IMEC, Belgium and KU Leuven, Belgium
fDate :
6/24/1905 12:00:00 AM
Keywords :
"CMOS technology","Doping profiles","Threshold voltage","Fluctuations","Implants","Permittivity","Poisson equations","Statistics","Capacitance","Degradation"
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
DOI :
10.1109/ESSDERC.2002.194997