Title :
Mechanisms of Dopant Redistribution and Retention in Silicon Following Ultra-low Energy Boron Implantation and Excimer Laser Annealing
Author :
L. Mariucci;G. Fortunato;S. Whelan;V. Privitera;G. Mannino
Author_Institution :
CNR-IFN, Roma, Italy
fDate :
6/24/1905 12:00:00 AM
Keywords :
"Silicon","Boron","Annealing"
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
DOI :
10.1109/ESSDERC.2002.195001
