• DocumentCode
    3619560
  • Title

    Simulation of High-K Tunnel Barriers for Nonvolatile Floating Gate Memories

  • Author

    M. Specht;M. Stadele;F. Hofmann

  • Author_Institution
    Infineon Technologies AG, Munich, Germany
  • fYear
    2002
  • fDate
    6/24/1905 12:00:00 AM
  • Firstpage
    599
  • Lastpage
    602
  • Keywords
    "Nonvolatile memory","High K dielectric materials","High-K gate dielectrics","Tunneling","Nonhomogeneous media","Hot carriers","Threshold voltage","Neodymium","Silicon compounds","Flash memory"
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
  • Print_ISBN
    88-900847-8-2
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2002.195002
  • Filename
    1503932
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3619560