DocumentCode :
3619562
Title :
A New Compact Horizontal Current Bipolar Transistor (HCBT) Fabricated in
Author :
T. Suligoj;K. Wang;M. Koricic;P. Biljanovic
Author_Institution :
Hong Kong University of Science and Tech., China
fYear :
2002
fDate :
6/24/1905 12:00:00 AM
Firstpage :
607
Lastpage :
610
Keywords :
"Bipolar transistors","Etching","Doping profiles","Crystallography","Lithography","BiCMOS integrated circuits","Ion implantation","Fabrication","Laboratories","Testing"
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
Type :
conf
DOI :
10.1109/ESSDERC.2002.195004
Filename :
1503934
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3619562