DocumentCode :
3619563
Title :
Effects of Boron and Germanium Base Profiles on SiGe and SiGe:C BJT Characteristics
Author :
A. Sadovnikov;C. Printy;T. Budri;R. Loo;P. Meunier-Beillard;M. El-Diwany
Author_Institution :
National Semiconductor Corp., Santa Clara, CA, USA
fYear :
2002
fDate :
6/24/1905 12:00:00 AM
Firstpage :
611
Lastpage :
614
Keywords :
"Boron","Silicon germanium","Germanium silicon alloys","Temperature","Carbon dioxide","Linearity","Tunneling","Radio frequency","Epitaxial growth","Doping profiles"
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
Type :
conf
DOI :
10.1109/ESSDERC.2002.195005
Filename :
1503935
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3619563
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