3619574

Photodetector with Internal Aiding Field Based-on GaAs/AlGaAs Heterostructures

A. Cola;F. Quaranta;B. Nabet;A. Cataldo

CNR IMM, Lecce, Italy

2002

6/24/1905 12:00:00 AM

655

658

"Photodetectors","Gallium arsenide","Heterojunctions","Doping","High speed optical techniques","Electron optics","Frequency domain analysis","Current measurement","Dark current","Electron emission"

ieee

Solid-State Device Research Conference, 2002. Proceeding of the 32nd European

88-900847-8-2

conf

10.1109/ESSDERC.2002.195016

1503946