مرکز منطقه ای اطلاع رساني علوم و فناوري - Vertical Double-Gate MOSFET based on epitaxial growth by LPCVD

DocumentCode :

3619647

Title :

Vertical Double-Gate MOSFET based on epitaxial growth by LPCVD

Author :

J. Moers;S. Trellenkamp;L. Vescan;M. Marso;P. Kordos;H. Luth

Author_Institution :

Institute of Thin Films and Interfaces, J¨

fYear :

2001

fDate :

6/23/1905 12:00:00 AM

Firstpage :

191

Lastpage :

194

Keywords :

"MOSFET circuits","Epitaxial growth","Silicon","Etching","Boron","Lithography","Resists","Insulation","Electrodes","Epitaxial layers"

Publisher :

ieee

Conference_Titel :

Solid-State Device Research Conference, 2001. Proceeding of the 31st European

Print_ISBN :

2-914601-01-8

Type :

conf

DOI :

10.1109/ESSDERC.2001.195233

Filename :

1506615

Link To Document :