• DocumentCode
    3619647
  • Title

    Vertical Double-Gate MOSFET based on epitaxial growth by LPCVD

  • Author

    J. Moers;S. Trellenkamp;L. Vescan;M. Marso;P. Kordos;H. Luth

  • Author_Institution
    Institute of Thin Films and Interfaces, J¨
  • fYear
    2001
  • fDate
    6/23/1905 12:00:00 AM
  • Firstpage
    191
  • Lastpage
    194
  • Keywords
    "MOSFET circuits","Epitaxial growth","Silicon","Etching","Boron","Lithography","Resists","Insulation","Electrodes","Epitaxial layers"
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2001. Proceeding of the 31st European
  • Print_ISBN
    2-914601-01-8
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2001.195233
  • Filename
    1506615
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3619647