DocumentCode :
3619648
Title :
RF-Noise of Deep-Submicron MOSFETs: Extraction and Modeling
Author :
G. Knoblinger
Author_Institution :
Infineon Technologies, Munich, Germany
fYear :
2001
fDate :
6/23/1905 12:00:00 AM
Firstpage :
331
Lastpage :
334
Keywords :
"MOSFETs","Noise measurement","CMOS technology","Hot carrier effects","Radio frequency","Thermal resistance","Noise figure","Wireless communication","System-on-a-chip","Low-noise amplifiers"
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2001. Proceeding of the 31st European
Print_ISBN :
2-914601-01-8
Type :
conf
DOI :
10.1109/ESSDERC.2001.195268
Filename :
1506650
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3619648
