Characterization and simulation of the parasitic BJT in 0.1um partially-depleted SOI devices

Author

C. Fenouillet-Beranger;O. Faynot;J.d. de Pontcharra;C. Tabone;G. Lecarval;A. Grouillet;J.L. Pelloie;D. Balestra

Author_Institution

LETI-CEA, Grenoble, France

fYear

2001

fDate

6/23/1905 12:00:00 AM

Firstpage

339

Lastpage

342

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2001. Proceeding of the 31st European

Print_ISBN

2-914601-01-8

Type

DOI

10.1109/ESSDERC.2001.195270

Filename

1506652

Link To Document