Title :
Quasi-Non Volatile Flatband-Voltage Shift in Metal-Oxide-Semiconductor Capacitors with Silicon-Rich-Oxide Dielectric
Author :
M. Rosmeulen;E. Sleeckx;K. De Meyer
Author_Institution :
IMEC, Leuven, Belgium and KU Leuven, Belgium
fDate :
6/23/1905 12:00:00 AM
Keywords :
"Dielectrics","Silicon","Capacitance-voltage characteristics","MOS capacitors","Voltage","Hysteresis","Random access memory","Nanocrystals","Fluid flow","Microelectronics"
Conference_Titel :
Solid-State Device Research Conference, 2001. Proceeding of the 31st European
Print_ISBN :
2-914601-01-8
DOI :
10.1109/ESSDERC.2001.195281