Title :
Offset voltage of Schottky-collector silicon-on-glass vertical PNP´s
Author :
G. Lorito;L.K. Nanver;N. Nenadovic
Author_Institution :
Lab. of ECTM, Delft Univ. of Technol., Netherlands
fDate :
6/27/1905 12:00:00 AM
Abstract :
Silicon-on-glass vertical PNPs are fabricated and investigated with respect to the influence of the collector design on the offset voltage. With Schottky collector contacts the offset voltage can be made both very low (< 0.1 V) or very high (/spl sim/ 0.3 V).
Keywords :
"Voltage","Annealing","Radio frequency","Surface resistance","Silicon","Doping","Schottky diodes","Laboratories","Integrated circuit technology","Radiofrequency integrated circuits"
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the
Print_ISBN :
0-7803-9309-0
DOI :
10.1109/BIPOL.2005.1555193
