• DocumentCode
    3620717
  • Title

    InGaN-based quantum-well LEDs: explanation of anomalous electro-optical characteristics

  • Author

    P.G. Eliseev;J. Lee;M. Osinski

  • Author_Institution
    Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
  • Volume
    1
  • fYear
    2005
  • fDate
    6/27/1905 12:00:00 AM
  • Firstpage
    147
  • Abstract
    Charge transport and luminescence in InGaN-based short-wavelength light-emitting diodes feature some anomalies: 1) low-temperature quenching of luminescence yield; 2) very large ideality factor of I-V curves. These observations are explained in terms of electron ballistic overflow and injection-induced conductivity on p-side.
  • Keywords
    "Light emitting diodes","Temperature dependence","Quantum well devices","Luminescence","Light sources","Cooling","Electron emission","Semiconductor diodes","Conductivity","Electron optics"
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2005. (CLEO). Conference on
  • Print_ISBN
    1-55752-795-4
  • Type

    conf

  • DOI
    10.1109/CLEO.2005.201706
  • Filename
    1572772
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3620717