Title :
Low Temperature Ferromagnetism of GaMnN Grown on 6H-SiC (0001) by Molecular Beam Epitaxy
Author :
X.M. Cai;A.B. Djurisic;M.H. Xie;H. Liu;X.X. Zhang
Author_Institution :
Dept. of Phys., Hong Kong Univ.
fDate :
6/26/1905 12:00:00 AM
Abstract :
GaMnN films with ~3 at. % Mn were grown on 6H SiC (0001) by plasma-assisted molecular beam epitaxy (MBE). The samples were characterized by X-ray diffraction (XRD), photoluminescence (PL), and superconducting quantum interference device (SQUID). The samples exhibited ferromagnetic properties at low temperature. The highest obtained Curie temperature Tc was 56 K. The origin of the ferromagnetic properties was discussed
Keywords :
"Molecular beam epitaxial growth","Plasma temperature","Superconducting films","SQUIDs","Silicon carbide","Plasma properties","Plasma devices","Plasma x-ray sources","X-ray diffraction","X-ray scattering"
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on
Print_ISBN :
0-7803-8820-8
DOI :
10.1109/COMMAD.2004.1577489
