DocumentCode
3620745
Title
Low Temperature Ferromagnetism of GaMnN Grown on 6H-SiC (0001) by Molecular Beam Epitaxy
Author
X.M. Cai;A.B. Djurisic;M.H. Xie;H. Liu;X.X. Zhang
Author_Institution
Dept. of Phys., Hong Kong Univ.
fYear
2004
fDate
6/26/1905 12:00:00 AM
Firstpage
49
Lastpage
52
Abstract
GaMnN films with ~3 at. % Mn were grown on 6H SiC (0001) by plasma-assisted molecular beam epitaxy (MBE). The samples were characterized by X-ray diffraction (XRD), photoluminescence (PL), and superconducting quantum interference device (SQUID). The samples exhibited ferromagnetic properties at low temperature. The highest obtained Curie temperature Tc was 56 K. The origin of the ferromagnetic properties was discussed
Keywords
"Molecular beam epitaxial growth","Plasma temperature","Superconducting films","SQUIDs","Silicon carbide","Plasma properties","Plasma devices","Plasma x-ray sources","X-ray diffraction","X-ray scattering"
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on
Print_ISBN
0-7803-8820-8
Type
conf
DOI
10.1109/COMMAD.2004.1577489
Filename
1577489
Link To Document