DocumentCode :
3621529
Title :
Process technology high-k i: metal gate stacks
Author :
F. Arnaud; Min Yang
fYear :
2005
fDate :
6/27/1905 12:00:00 AM
Firstpage :
22
Lastpage :
22
Keywords :
"High K dielectric materials","High-K gate dielectrics","Microelectronics","Leakage current","Electron mobility","Electrodes"
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-9268-X
Type :
conf
DOI :
10.1109/IEDM.2005.1609255
Filename :
1609255
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3621529
