• DocumentCode
    3621533
  • Title

    CMOS devices mobility enhancement and low resistance source/drain

  • Author

    F. Boeuf; Huiling Shang

  • fYear
    2005
  • fDate
    6/27/1905 12:00:00 AM
  • Firstpage
    128
  • Lastpage
    128
  • Keywords
    "Ballistic transport","Silicon germanium","Germanium silicon alloys","Contact resistance","Microelectronics","Electrical resistance measurement","Electron mobility","High K dielectric materials","High-K gate dielectrics","Paper technology"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
  • Print_ISBN
    0-7803-9268-X
  • Type

    conf

  • DOI
    10.1109/IEDM.2005.1609285
  • Filename
    1609285
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3621533