• DocumentCode
    3621535
  • Title

    CMOS and interconnect reliability interconnect, plasma damage, and ESD reliability

  • Author

    Seung Kang;T. Nogami

  • fYear
    2005
  • fDate
    6/27/1905 12:00:00 AM
  • Firstpage
    178
  • Lastpage
    178
  • Keywords
    "Plasmas","Electrostatic discharge","Stress control","Control systems","Dielectrics","Kinetic theory","Moisture","Annealing","Hafnium oxide","Tin"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
  • Print_ISBN
    0-7803-9268-X
  • Type

    conf

  • DOI
    10.1109/IEDM.2005.1609299
  • Filename
    1609299
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3621535