مرکز منطقه ای اطلاع رساني علوم و فناوري - CMOS and interconnect reliability interconnect, plasma damage, and ESD reliability

DocumentCode :

3621535

Title :

CMOS and interconnect reliability interconnect, plasma damage, and ESD reliability

Author :

Seung Kang;T. Nogami

fYear :

2005

fDate :

6/27/1905 12:00:00 AM

Firstpage :

178

Lastpage :

178

Keywords :

"Plasmas","Electrostatic discharge","Stress control","Control systems","Dielectrics","Kinetic theory","Moisture","Annealing","Hafnium oxide","Tin"

Publisher :

ieee

Conference_Titel :

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Print_ISBN :

0-7803-9268-X

Type :

conf

DOI :

10.1109/IEDM.2005.1609299

Filename :

1609299

Link To Document :