• DocumentCode
    3621544
  • Title

    CMOS and interconnect reliability gate dielectric breakdown - modeling and mechanism

  • Author

    P. Nicollian;K. Eriguchi

  • fYear
    2005
  • fDate
    6/27/1905 12:00:00 AM
  • Firstpage
    387
  • Lastpage
    387
  • Keywords
    "Dielectric breakdown","Semiconductor device modeling","Hydrogen","Electric breakdown","Physics","MOS devices","Instruments","Degradation","Power generation","Hafnium oxide"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
  • Print_ISBN
    0-7803-9268-X
  • Type

    conf

  • DOI
    10.1109/IEDM.2005.1609358
  • Filename
    1609358
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3621544