DocumentCode :
3621544
Title :
CMOS and interconnect reliability gate dielectric breakdown - modeling and mechanism
Author :
P. Nicollian;K. Eriguchi
fYear :
2005
fDate :
6/27/1905 12:00:00 AM
Firstpage :
387
Lastpage :
387
Keywords :
"Dielectric breakdown","Semiconductor device modeling","Hydrogen","Electric breakdown","Physics","MOS devices","Instruments","Degradation","Power generation","Hafnium oxide"
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-9268-X
Type :
conf
DOI :
10.1109/IEDM.2005.1609358
Filename :
1609358
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3621544
