• DocumentCode
    3621545
  • Title

    Process technology high-k ii: gate dielectrics

  • Author

    H. Watanabe; Gyo-Young Jin

  • fYear
    2005
  • fDate
    6/27/1905 12:00:00 AM
  • Firstpage
    412
  • Lastpage
    412
  • Keywords
    "High K dielectric materials","High-K gate dielectrics","Dielectric thin films","Dielectric substrates","FETs","Charge carrier processes","National electric code","Paper technology","Niobium compounds","Titanium compounds"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
  • Print_ISBN
    0-7803-9268-X
  • Type

    conf

  • DOI
    10.1109/IEDM.2005.1609365
  • Filename
    1609365
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3621545