DocumentCode :
3621551
Title :
CMOS and interconnect reliability process and electrical degradation in flash memories and performance boosted CMOS devices
Author :
A. Visconti;W. Tonti
fYear :
2005
fDate :
6/27/1905 12:00:00 AM
Firstpage :
538
Lastpage :
538
Keywords :
"CMOS process","Degradation","Flash memory","Microelectronics","MOSFETs","Reliability engineering","CMOS technology","Paper technology","Photonic band gap","Tunneling"
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-9268-X
Type :
conf
DOI :
10.1109/IEDM.2005.1609401
Filename :
1609401
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3621551
