• DocumentCode
    3621566
  • Title

    CMOS devices advanced gate stacks

  • Author

    R. Lander;K. Kuhn

  • fYear
    2005
  • fDate
    6/27/1905 12:00:00 AM
  • Firstpage
    881
  • Lastpage
    881
  • Keywords
    "Hafnium oxide","Silicon germanium","Germanium silicon alloys","MOS devices","Process design","Tin","Electrodes","FinFETs","Threshold voltage","Voltage control"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
  • Print_ISBN
    0-7803-9268-X
  • Type

    conf

  • DOI
    10.1109/IEDM.2005.1609498
  • Filename
    1609498
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3621566