• DocumentCode
    3621569
  • Title

    Modeling and simulation simulation of doping and stress effects in advanced CMOS

  • Author

    C. Rafferty;J. Lorenz

  • fYear
    2005
  • fDate
    6/27/1905 12:00:00 AM
  • Firstpage
    967
  • Lastpage
    967
  • Keywords
    "Semiconductor device modeling","Semiconductor process modeling","Doping","Tensile stress","Compressive stress","CMOS technology","Paper technology","FinFETs","Thermal stresses"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
  • Print_ISBN
    0-7803-9268-X
  • Type

    conf

  • DOI
    10.1109/IEDM.2005.1609522
  • Filename
    1609522
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3621569