Parameterizable architecture-level SRAM power model using circuit-simulation backend for leakage calibration

We propose an accurate architecture-level power estimation method for SRAM memories. This hybrid method is composed of an analytical part for dynamic power estimation and a circuit-simulation backend used to obtain static leakage power values of all basic memory components. The method is flexible in that memory size is an arbitrary parameter. In a comparison to circuit-level simulations (Hspice) of complete 2 KBytes and 8 KBytes 6T-SRAM memories implemented both in 0.13-mum and 65-nm (BPTM) bulk CMOS processes, the proposed method shows a high accuracy in estimating leakage power