• DocumentCode
    3621722
  • Title

    Leakage current reduction in shallow PN junction

  • Author

    D. Resnick;D. Vrtacnik;U. Aljancic

  • Author_Institution
    Fac. of Electr. & Comput. Eng., Ljubljana Univ., Yugoslavia
  • fYear
    1991
  • fDate
    6/13/1905 12:00:00 AM
  • Firstpage
    267
  • Abstract
    An investigation of the influence of oxidation-induced stacking faults (OSF) on the diode reversal I-V characteristic was carried out at three different temperatures. It is shown that OSF can affect reversal leakage current with respect to size and density. With proper selection of the oxidation temperature and especially with introduction of TCA 111 into the oxidizing atmosphere, it is possible to suppress the growth of OSF and reduce the leakage current in PN junctions.
  • Keywords
    "Leakage current","Oxidation","Temperature","Atmosphere","Silicon","Stacking","Impurities","Capacitive sensors","Diodes","Optical microscopy"
  • Publisher
    ieee
  • Conference_Titel
    Electrotechnical Conference, 1991. Proceedings., 6th Mediterranean
  • Print_ISBN
    0-87942-655-1
  • Type

    conf

  • DOI
    10.1109/MELCON.1991.161828
  • Filename
    161828
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3621722