DocumentCode
3621993
Title
Enhancement of Extraction Efficiency in Laser-debonded GaN Light Emitting Diodes
Author
C.P. Chan;T.M. Yue;C. Surya;A.M.C. Ng;A.B. Djurisic;F. Scholz;C.K. Liu;M. Li
Author_Institution
Department of Electronic and Information Engineering and Photonics Research Centre, The Hong Kong Polytechnic University, Hong Kong
fYear
2005
fDate
6/27/1905 12:00:00 AM
Firstpage
479
Lastpage
482
Abstract
We conducted detailed investigations of laser-assisted debonding of GaN-based light emitting diodes (LEDs). The devices were grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. After laser debonding the devices were photo-electrochemically (PEC) etched for the roughening of the debonded surface. The dependence of the luminous intensity of the LEDs as a function of the surface roughness was investigated in detailed. A 60% increase in the luminous intensity was observed. This increase is attributed to the enhancement in photon extraction efficiency.
Keywords
"Gallium nitride","Light emitting diodes","Surface emitting lasers","Rough surfaces","Surface roughness","Surface morphology","Chemical lasers","Etching","Substrates","LED lamps"
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
Print_ISBN
0-7803-9339-2
Type
conf
DOI
10.1109/EDSSC.2005.1635312
Filename
1635312
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