Title :
Enhancement of Extraction Efficiency in Laser-debonded GaN Light Emitting Diodes
Author :
C.P. Chan;T.M. Yue;C. Surya;A.M.C. Ng;A.B. Djurisic;F. Scholz;C.K. Liu;M. Li
Author_Institution :
Department of Electronic and Information Engineering and Photonics Research Centre, The Hong Kong Polytechnic University, Hong Kong
fDate :
6/27/1905 12:00:00 AM
Abstract :
We conducted detailed investigations of laser-assisted debonding of GaN-based light emitting diodes (LEDs). The devices were grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. After laser debonding the devices were photo-electrochemically (PEC) etched for the roughening of the debonded surface. The dependence of the luminous intensity of the LEDs as a function of the surface roughness was investigated in detailed. A 60% increase in the luminous intensity was observed. This increase is attributed to the enhancement in photon extraction efficiency.
Keywords :
"Gallium nitride","Light emitting diodes","Surface emitting lasers","Rough surfaces","Surface roughness","Surface morphology","Chemical lasers","Etching","Substrates","LED lamps"
Conference_Titel :
Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
Print_ISBN :
0-7803-9339-2
DOI :
10.1109/EDSSC.2005.1635312
