Characterization of low-temperature ultrananocrystalline diamond RF MEMS resonators

Author

S.P. Pacheco;P. Zurcher;S.R. Young;D. Weston;W.J. Dauksher;O. Auciello;J.A. Carlisle;N. Kane;J.P. Birrell

Author_Institution

Technol. Solutions Organ., Freescale Semicond., Inc., Tempe, AZ, USA

fYear

2005

fDate

6/27/1905 12:00:00 AM

Abstract

For the first time working MEMS resonators have been produced using low-temperature deposited (550degC) ultrananocrystallinetrade diamond (UNCDtrade) films. Using a lumped-element model to fit experimental data, UNCD materials properties such as a Young´s modulus of 710 GPa and an acoustic velocity of 14,243 m/s have been deduced. This is the highest acoustic velocity measured to date for a diamond MEMS structural layer deposited at low temperatures. A 10 MHz resonator shows a DC-tunability of the resonance frequency of 15% between 15 and 25 V and the breakdown voltage behavior shows electrostatic breakdown rather than electro-mechanical pull-down for higher frequency devices. Good resonant frequency reproducibility is observed when cycling the resonators over bias voltages from 15 to 25 V and over RF power levels of -10 to 10 dBm

Keywords

"Radiofrequency microelectromechanical systems","Micromechanical devices","Resonant frequency","Material properties","Acoustic devices","Acoustic measurements","Electrostatic measurements","Velocity measurement","Temperature","Resonance"

Publisher

ieee

Conference_Titel

Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European

Print_ISBN

88-902012-0-7

Type

conf

DOI

10.1109/EUMC.2005.1610241

Filename

1637284